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BTS612N1

Features: • Overload protection• Current limitation• Short circuit protection• Thermal shutdown• Overvoltage protection (including load dump)• Fast demagnetization of inductive loads• Reverse battery protection1)• Undervoltage and overvoltage shutdow...

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SeekIC No. : 004303081 Detail

BTS612N1: Features: • Overload protection• Current limitation• Short circuit protection• Thermal shutdown• Overvoltage protection (including load dump)• Fast demagnetizatio...

BTS612N1 Data Sheet

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Part Number:
BTS612N1
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/9/27

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Product Details

Description



Features:

• Overload protection
• Current limitation
• Short circuit protection
• Thermal shutdown
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown with auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in OFF-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection




Application

• µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitve loads
• Replaces electromechanical relays, fuses and discrete circuits


Specifications

 Parameter  Symbol  Values Unit 
Supply voltage (overvoltage protection see page 4) Vbb 43 V
Supply voltage for full short circuit protection
Tj Start=-40 ...+150°C		 Vbb 34 V
Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V
RI3)= 2 Ω, RL= 5.3 Ω, td= 200 ms, IN= low or high		 VLoad dump4) 60 V
Load current (Short circuit current, see page 5) IL self-limited A
Operating temperature range
Storage temperature range		 Tj
Tstg		 -40 ...+150
-55 ...+150
Power dissipation (DC), TC 25 Ptot 36 W
Inductive load switch-off energy dissipation, single pulse
Vbb = 12V, Tj,start = 150°C, TC = 150°C const.
one channel, IL = 2.3 A, ZL = 89 mH, 0 Ω:
both channels parallel, IL = 4.4 A, ZL = 47 mH, 0 Ω:
see diagrams on page 9		 EAS 290
580		 mJ
 Electrostatic discharge capability (ESD) IN:
(Human Body Model) all other pins:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993		 VESD 1.0
2.0		 kV
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 7		 VIN
IIN
IST		 -10 ... +16
±2.0
±5.0		 V
mA



Description

N channel vertical power FET BTS612N1 with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions.


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