BTS5440G

Power Switch ICs - POE / LAN PWR SWITCH HI-SIDE 3.1A 28PIN

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BTS5440G Picture
SeekIC No. : 00629132 Detail

BTS5440G: Power Switch ICs - POE / LAN PWR SWITCH HI-SIDE 3.1A 28PIN

floor Price/Ceiling Price

US $ 3.89~4.48 / Piece | Get Latest Price
Part Number:
BTS5440G
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~646
  • 646~1000
  • Unit Price
  • $4.48
  • $3.89
  • Processing time
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Upload time: 2024/9/27

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Product Details

Quick Details

On Resistance (Max) : 0.0055 Ohms Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : DSO-28    

Description

Crosstalk :
Bandwidth :
On Time (Max) :
Off Time (Max) :
Switch Voltage (Max) :
Operating Supply Voltage :
Number of Switches :
Switch Configuration :
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Package / Case : DSO-28
On Resistance (Max) : 0.0055 Ohms


Application

• All types of resistive, inductive and capacitive loads
• C compatible high-side power switch with diagnostic feedback for 12 V grounded loads
• Due to the adjustable current limitation best suitable for loads with high inrush currents, so as lamps
• Replaces electromechanical relays, fuses and discrete circuits



Pinout

  Connection Diagram


Specifications

Parameter

Symbol

Value

Unit

Supply voltage (overvoltage protection see page 6) Vbb

281)

V

Supply voltage for full short circuit protection; Tj =-40 ...+150°C Vbb(SC)

282)

Maximum voltage across DMOS VON

52

Load dump protection3) VLoadDump4) = VA + VS; VA = 13,5 V
In = low or high; td = 400 ms; RI4) = 2
RL = 2.25
RL = 6.8
VLoaddump

40
53

Load current (Short - circuit current, see page 7) IL

IL(lim)5)

A

Operating temperature range Tj

-40...+150

°C

Storage temperature range Tstg

-55...+150

Dynamical temperature rise at switching dT

60

K

Power dissipation6) (DC), one channel active     TA = 85 °C Ptot

1,4

W

Maximal switchable inductance, single pulse
Vbb=12V, Tjstart=150°C;         (see diagrams on page 12)
IL = 6 A, EAS = 0.319 J, RL = 0 ,                 one channel:
IL = 12 A, EAS = 0.679 J, RL = 0 ,      two parallel channels:
ZL(s)

9.8
5.2

mH

Electrostatic discharge voltage                              IN:
(Human Body Model)                                           IS:
according to ANSI EOS/ESD - S5.1 - 1993 , ESD STM5.1 - 1998 OUT:
VESD

1.0
2.0
4.0

kV

Continuous input voltage VIN

-10...16

V

Voltage at current limit adjustment pin VCLA

-10...16

Current limit adjustment current ICLA

±5.0

mA

Current through input pin (DC) IIN

±5.0

Current through sense (DC)    (see page 11) IIS

-5...10




Description

The BTS5440G features are as follows:
• N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology.
• Providing embedded protective functions.
• Extern adjustable current limitation.


Parameters:

Technical/Catalog InformationBTS5440G
VendorInfineon Technologies
CategoryIntegrated Circuits (ICs)
Package / CaseDSO-28
Mounting TypeSurface Mount
TypeHigh Side
Voltage - Supply4.5 V ~ 28 V
On-State Resistance21 mOhm
Current - Output / Channel5.7A
Current - Peak Output10A
PackagingTape & Reel (TR)
Input TypeNon-Inverting
Number of Outputs4
Operating Temperature-40°C ~ 150°C
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BTS5440G
BTS5440G



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