BTS5020-2E

The BTS5020-2E is designed as one kind of smart high-side power switch. The general description of BTS5020-2E are:(1)N channel vertical power MOSFET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology; (2)Providing embedded protective functions.

The BTS5020-2E can be used in (1)uC compatible high-side power switch with diagnostic feedback for 12V and 24V and 42V grounded loads; (2)all types of resistive, inductive and capacitive loads; (3)most suitable for inductive loads; (4)replaces electromechanical relays, fuses and discrete circuits. And the basic functions of it are:(1)very low standby current; (2)CMOS compatible input; (3)improved electromagnetic compatibility (EMC); (4)fast demagnetization of inductive loads; (5)stable behaviour at undervoltage; (6)wide operating voltage range; (7)logic ground independent from load ground.

The absolute maximum ratings of the BTS5020-2E can be summarized as:(1)supply voltage:43 V;(2)supply voltage for full short circuit protection:36 V;(3)load current:self-limited A;(4)operating temperature range:-40 to +150;(5)storage temperature range:-55 to +150;(6)power dissipation (DC):3.0 W;(7)current through input pin (DC):±0.3 mA;(8)pulsed current through input pin:±5.0 mA. If you want to know more information such as the electrical characteristics about the BTS5020-2E, please download the datasheet in www.seekic.com or www.chinaicmart.com .