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BTS432E2: Power Switch ICs - Power Distribution

BTS432E2 Data Sheet

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Part Number:: BTS432E2
Mfg:: Infineon Technologies
Supply Ability:: 5000

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1~5000

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Upload time: 2024/12/24

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Product Details

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Number of Outputs :	1	On Resistance (Max) :	0.03 Ohms
Supply Current (Max) :	1.1 mA	Maximum Operating Temperature :	+ 150 C
Mounting Style :	Through Hole	Package / Case :	TO-220AB-5

Description

On Time (Max) :
Off Time (Max) :
Operating Supply Voltage :
Number of Outputs : 1
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Package / Case : TO-220AB-5
Supply Current (Max) : 1.1 mA
On Resistance (Max) : 0.03 Ohms

Features:

• Load dump and reverse battery protection¹)
• Clamp of negative voltage at output
• Short-circuit protection
• Current limitation
• Thermal shutdown
• Diagnostic feedback
• Open load detection in ON-state
• CMOS compatible input
• Electrostatic discharge (ESD) protection
• Loss of ground and loss of V_bb protection²)
• Overvoltage protection
• Undervoltage and overvoltage shutdown with auto-
restart and hysteresis

Application

• µC compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitve loads
• Replaces electromechanical relays and discrete circuits

Specifications

Parameter	Symbol	Values	Unit
Supply voltage (overvoltage protection see page 3)	V_bb	63	V
Load dump protection VLoadDump = U_A+ V_s, U_A = 13.5 V R_I= 2 , R_L= 1.1 , t_d= 200 ms, IN= low or high	V_s3)	66.5	V
Load current (Short-circuit current, see page 4)	I_L	self-limited	A
Operating temperature range Storage temperature range	T_jT_stg	-40 ...+150 -55 ...+150	°C
Power dissipation (DC)	P_tot	125	W
Inductive load switch-off energy dissipation, single pulse T_j=150 °C:	E_AS	1.7	J
Electrostatic discharge capability (ESD) (Human Body Model)	V_ESD	2.0	kV
Input voltage (DC) Current through input pin (DC) Current through status pin (DC) see internal circuit diagrams page 6...	V_IN I_IN I_ST	-0.5 ... +6 ±5.0 ±5.0	V mA
Thermal resistance chip - case: junction - ambient (free air): SMD version, device on pcb4):	R_thJC R_thJA	1 75 tbd	K/W

Description

N channel vertical power FET BTS432E2 with charge pump, ground referenced CMOS compatible input and diagnostic feedback, integrated in Smart SIPMOS^® chip on chip technology. Providing protective functions.

Parameters:

Technical/Catalog Information	BTS432E2
Vendor	Infineon Technologies
Category	Integrated Circuits (ICs)
Package / Case	TO-220AB
Mounting Type	Through Hole
Type	High Side
Voltage - Supply	4.5 V ~ 42 V
On-State Resistance	30 mOhm
Current - Output / Channel	11A
Current - Peak Output	44A
Packaging	Tape & Reel (TR)
Input Type	Non-Inverting
Number of Outputs	1
Operating Temperature	-40°C ~ 150°C
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BTS432E2 BTS432E2 BTS432E2IN ND BTS432E2INND BTS432E2IN

BTS432E2

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