BTS410E2

Power Switch ICs - Power Distribution PROFET SMART HI SIDE PWR SW

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SeekIC No. : 00630401 Detail

BTS410E2: Power Switch ICs - Power Distribution PROFET SMART HI SIDE PWR SW

floor Price/Ceiling Price

US $ 1.14~1.43 / Piece | Get Latest Price
Part Number:
BTS410E2
Mfg:
Infineon Technologies
Supply Ability:
5000

Price Break

  • Qty
  • 0~315
  • 315~1000
  • 1000~5000
  • Unit Price
  • $1.43
  • $1.25
  • $1.14
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Quick Details

Number of Outputs : 1 On Resistance (Max) : 220 mOhms
On Time (Max) : 125 us Off Time (Max) : 85 us
Operating Supply Voltage : 4.7 V to 42 V Supply Current (Max) : 2.1 mA
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB-5    

Description

Number of Outputs : 1
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Package / Case : TO-220AB-5
On Resistance (Max) : 220 mOhms
On Time (Max) : 125 us
Off Time (Max) : 85 us
Operating Supply Voltage : 4.7 V to 42 V
Supply Current (Max) : 2.1 mA


Features:

• Overload protection
• Current limitation
• Short circuit protection
• Thermal shutdown
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown with auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in ON-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
Electrostatic discharge (ESD) protection



Application

• C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
• All types of resistive, inductive and capacitve loads
• Replaces electromechanical relays, fuses and discrete circuits



Specifications

Parameter Symbol Values Unit
Supply voltage (overvoltage protection see page 3) Vbb
65
V
Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V
RI= 2, RL= 6.6, td= 400 ms, IN= low or high
VLoaddump4)
100
V
Load current (Short-circuit current, see page 4) IL
self-limited
A
Operating temperature range
Storage temperature range
Tj
Tstg
-40 ...+150
-55 ...+150
°C
Power dissipation (DC),TC25 Ptot
50
W
Inductive load switch-off energy dissipation, single pulse
Vbb =12V, Tj,start =150°C, TC = 150°C const.
                     IL = 1.8 A, ZL = 2.3 H, 0 :
EAS 4.5 J
Electrostatic discharge capability (ESD)       IN:
(Human Body Model)                 all other pins:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
VESD
1
2
kV
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 6
VIN
IIN
IST
-0.5 ... +6
±5.0
±5.0
V
mA



Description

N channel vertical power FET BTS410E2 with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology. Providing embedded protective functions.


Parameters:

Technical/Catalog InformationBTS410E2
VendorInfineon Technologies
CategoryIntegrated Circuits (ICs)
Package / CaseTO-220-5 (Bent and Staggered Leads)
Mounting TypeThrough Hole
TypeHigh Side
Voltage - Supply4.7 V ~ 42 V
On-State Resistance190 mOhm
Current - Output / Channel1.8A
Current - Peak Output12A
PackagingTape & Reel (TR)
Input TypeNon-Inverting
Number of Outputs1
Operating Temperature-40°C ~ 150°C
Drawing Number*
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
Other Names BTS410E2
BTS410E2
BTS410E2IN ND
BTS410E2INND
BTS410E2IN



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