BTS410D2 Selling Leads, Price trend, BTS410D2 DataSheet download, circuit diagram from SeekIC.com

Features: · Overload protection· Current limitation· Short circuit protection· Thermal shutdown· Overvoltage protection (including load dump)· Fast demagnetization of inductive loads· Reverse battery protection1)· Undervoltage and overvoltage shutdown with auto-restart and hysteresis· CMOS diagnos...

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SeekIC No. : 004303065 Detail

BTS410D2: Features: · Overload protection· Current limitation· Short circuit protection· Thermal shutdown· Overvoltage protection (including load dump)· Fast demagnetization of inductive loads· Reverse batter...

BTS410D2 Data Sheet

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Part Number:: BTS410D2
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/12/21

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Product Details

Description

Features:

· Overload protection
· Current limitation
· Short circuit protection
· Thermal shutdown
· Overvoltage protection (including load dump)
· Fast demagnetization of inductive loads
· Reverse battery protection1)
· Undervoltage and overvoltage shutdown with auto-restart and hysteresis
· CMOS diagnostic output
· Open load detection in ON-state
· CMOS compatible input
· Loss of ground and loss of Vbb protection
· Electrostatic discharge (ESD) protection

Application

· mC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
· All types of resistive, inductive and capacitve loads
· Replaces electromechanical relays, fuses and discrete circuits

Specifications

Parameter	Symbol	Values	Unit
Supply voltage (overvoltage protection see page 3)	V_bb	43	V
Load dump protection2) V_LoadDump = U_A + V_s, U_A = 13.5 V R_I³⁾= 2 , R_L= 5.3 , t_d= 200 ms, IN= low or high	V_{Load dump}⁴⁾	100	V
Load current (Short circuit current, see page 4)	I_L	self-limited	A
Operating temperature range Storage temperature range	T_j _Tstg	-40 ...+150 -55 ...+150	°C
Power dissipation (DC), T_C 25 °C	P_tot	50	W
Inductive load switch-off energy dissipation, single pulse V_bb =12V, T_j,start =150°C, T_C =150°C const. I_L = 2.3 A, Z_L = 98 mH, 0 :	E_AS	4.5	J
Electrostatic discharge capability (ESD) IN: (Human Body Model) all other pins: acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993	V_ESD	1 2	kV
Input voltage (DC) Current through input pin (DC) Current through status pin (DC) see internal circuit diagrams page 6	V_IN I_IN I_ST	-0.5 ... +6 ±5.0 ±5.0	V mA

Description

N channel vertical power FET BTS410D2 with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOSâ technology. Fully protected by embedded protection functions.

BTS410D2

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