BTS308

Features: • Overload protection• Current limitation• Short circuit protection• Thermal shutdown• Overvoltage protection (including load dump)• Fast demagnetization of inductive loads• Reverse battery protection1)• Undervoltage and overvoltage shutdow...

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SeekIC No. : 004303064 Detail

BTS308: Features: • Overload protection• Current limitation• Short circuit protection• Thermal shutdown• Overvoltage protection (including load dump)• Fast demagnetizatio...

floor Price/Ceiling Price

Part Number:
BTS308
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/9/27

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Product Details

Description



Features:

• Overload protection
• Current limitation
• Short circuit protection
• Thermal shutdown
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection1)
• Undervoltage and overvoltage shutdown with auto-restart and hysteresis
• Open drain diagnostic output
• Open load detection in OFF-state
• CMOS compatible input
• Loss of ground and loss of Vbb protection
• Electrostatic discharge (ESD) protection



Application

• C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
• Most suitable for inductive loads
• Replaces electromechanical relays, fuses and discrete circuits
• Fast switching
• Not suitable for lamp loads



Specifications

Parameter

Symbol

Values

Unit

Supply voltage (overvoltage protection see page 3) Vbb

65

V

Load current (Short circuit current, see page 4) IL

self-limited

A

Operating temperature range
Storage temperature range
Tj
Tstg

-40 ...+150
-55 ...+150

°C

Power dissipation (DC), TC 25 °C Ptot

50

W

Electrostatic discharge capability (ESD)          IN, ST:
(Human Body Model)                           all other pins:
VESD

1.0
tbd (>1.0)

kV

Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 6
VIN
IIN
IST

-10 ... +16
±5.0
±5.0

V
mA

Thermal resistance                 chip - case:
                 junction - ambient (free air):
RthJC
RthJA

2.5
75

K/W




Description

N channel vertical power FET BTS308 with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.


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