BTS244Z

Number of Switches :
Switch Configuration :
On Resistance (Max) :
Crosstalk :
Bandwidth :
On Time (Max) :
Off Time (Max) :
Switch Voltage (Max) :
Operating Supply Voltage :
Mounting Style : Through Hole
Maximum Operating Temperature : + 175 C
Package / Case : TO-220AB


Features:

N-Channel
Enhancement mode
Logic Level Input
Analog driving possible
Fast switching up to 1 MHz
Potential-free temperature sensor with thyristor characteristics
Overtemperature protection
Avalanche rated




Pinout






Specifications

Parameter	Symbol	Value	Unit
Drain source voltage	VDS	55	V
Drain-gate voltage, RGS = 20 k	VDGR	55
Gate source voltage	VGS	±20
Nominal load current (ISO 10483) VGS = 4.5 V, VDS 0.5 V, TC = 85 °C VGS = 10 V, VDS 0.5 V, TC = 85 °C	ID(ISO)	19 26	A
Continuous drain current 1) TC = 100 °C, VGS = 4.5V	ID	35
Pulsed drain current	ID puls	188
Avalanche energy, single pulse ID = 19 A, RGS = 25	EAS	1.65	J
Power dissipation TC = 25 °C	Ptot	170	W
Operating temperature 2)	Tj	-40 ...+175	°C
Peak temperature ( single event )	Tjpeak	200
Storage temperature	Tstg	-55 ... +150
DIN humidity category, DIN 40 040		E
IEC climatic category; DIN IEC 68-1		40/150/56

Description

Speed TEMPFET of the BTS244Z are:(1)N-channel;(2)enhancement mode;(3)logic level input;(4)analog driving possible;(5)fast switching up to 1 MHz;(6)potential-free temperature sensor with thyristor characteristics;(7)overtemperature protection;(8)avalanche rated.

The absolute maximum ratings of the BTS244Z can be summarized as:(1):the symbol is VDS,the parameter is drain source voltage,the value is 55,the unit is V;(2):the symbol is VDGR,the parameter is drain-gate voltage, RGS = 20 k,the value is 55,the unit is V;(3):the symbol is VGS,the parameter is gate source voltage,the value is ±20,the unit is V;(4):the symbol is IS(ISO),the parameter is nominal load current (ISO 10483) VGS=4.5V,VDS 0.5V, TC=85,the value is 19,the unit is A;(5):the symbol is IS(ISO),the parameter is nominal load current (ISO 10483) VGS=10V,VDS 0.5V, TC=85,the value is 26,the unit is A;(6):the symbol is ID,the parameter is continuous drain current,the value is 35,the unit is A;(7):the symbol is ID pulse,the parameter is pulsed drain current,the value is 188,the unit is A;(8):the symbol is EAS,the parameter is avalanche energy, single pulse,the value is 1.65,the unit is J;(9):the symbol is Ptot,the parameter is power dissipation,the value is 170,the unit is W;(10):the symbol is Tj,the parameter is junction temperature,the value is -40 to +175,the unit is ;(11):the symbol is Tjpeak,the parameter is peak temperature,the value is 200,the unit is ;(12):the symbol is Tstg,the parameter is storage temperature,the value is -55 to 150,the unit is .

The thermal characteristics of the BTS244Z can be summarized as:(1):the symbol is RthJC,the parameter is junction - case,the value is 0.88,the unit is K/W;(2):the symbol is Rth(JA),the parameter is thermal resistance @ min. footprint,the value is 62,the unit is K/W;(3):the symbol is Rth(JA),the parameter is thermal resistance @ 6 cm2 cooling area,the Typ is 33,the Max is 40,the unit is K/W.

Parameters:

Technical/Catalog Information	BTS244Z
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	35A
Rds On (Max) @ Id, Vgs	13 mOhm @ 19A, 10V
Input Capacitance (Ciss) @ Vds	2660pF @ 25V
Power - Max	170W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	130nC @ 10V
Package / Case	TO-220-5 (Bent and Staggered Leads)
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BTS244Z BTS244Z