Specifications Parameters Symbol Limits Unit Collector-Emitter Breakdown Voltage VCEO -400 V Collector-Base Breakdown Voltage VCBO -400 V Emitter-Base Breakdown Voltage VEBO -6 V Collector Current IC -300 mA Collector Power Dissipa...
BTPA94N3: Specifications Parameters Symbol Limits Unit Collector-Emitter Breakdown Voltage VCEO -400 V Collector-Base Breakdown Voltage VCBO -400 V Emitter-Base Brea...
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Parameters |
Symbol |
Limits |
Unit |
Collector-Emitter Breakdown Voltage |
VCEO |
-400 |
V |
Collector-Base Breakdown Voltage |
VCBO |
-400 |
V |
Emitter-Base Breakdown Voltage |
VEBO |
-6 |
V |
Collector Current |
IC |
-300 |
mA |
Collector Power Dissipation |
Pd |
225 |
mW |
Junction Temperature |
Tj |
150 |
°C |
Thermal Resistance, Junction to Ambient |
RJA |
556 |
°C/W |
Storage Temperature |
Tstg |
-55~150 |
°C |
The BTPA94N3 features are as follows:
• High breakdown voltage. (BVCEO=-400V)
• Low saturation voltage, typically VCE(sat) = -0.07V at Ic/IB =-10mA/-1mA.
• Wide SOA (safe operation area).
• Complementary to BTNA44N3.