Features: • Low Noise and High Gain:• NF=1.4dB, TYP. @ VCE=2V, Ic=4.2mA, f=0.9GHz Ga=12dB, TYP. @ VCE=2V, Ic=4.2mA, f=0.9GHzS21² =13.5dB @ VCE =5V, Ic =4.5mA, f=0.9GHzApplication• Low noise and high gain amplifiers & Oscillator buffer amplifiers• Cordless Phone : L...
BTC5094N3: Features: • Low Noise and High Gain:• NF=1.4dB, TYP. @ VCE=2V, Ic=4.2mA, f=0.9GHz Ga=12dB, TYP. @ VCE=2V, Ic=4.2mA, f=0.9GHzS21² =13.5dB @ VCE =5V, Ic =4.5mA, f=0.9GHzApplication...
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Parameters |
Symbol |
Limits |
Unit |
Collector-Emitter Breakdown Voltage |
VCEO |
10 |
V |
Collector-Base Breakdown Voltage |
VCBO |
18 |
V |
Emitter-Base Breakdown Voltage |
VEBO |
2.5 |
V |
Collector Current |
IC |
20 *1 |
mA |
Collector Power Dissipation |
Pd |
150 |
mW |
Junction Temperature |
Tj |
125 |
°C |
Storage Temperature |
Tstg |
-50~125 |
°C |