Features: • Low VCE(SAT) , VCE(SAT) -0.3V (IC / IB=-1A/-100mA)• Large collector current, IC=-1A• Pb-free packageSpecifications Parameter Symbol Limits Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -32 V Emitter-Ba...
BTB589N3: Features: • Low VCE(SAT) , VCE(SAT) -0.3V (IC / IB=-1A/-100mA)• Large collector current, IC=-1A• Pb-free packageSpecifications Parameter Symbol Limits Unit Colle...
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Parameter |
Symbol |
Limits |
Unit |
Collector-Base Voltage |
VCBO |
-50 |
V |
Collector-Emitter Voltage |
VCEO |
-32 |
V |
Emitter-Base Voltage |
VEBO |
-5 |
V |
Collector Current (DC) |
IC |
-1 |
A |
Collector Current (Pulse) |
ICP |
-2 |
A |
Power Dissipation |
Pd |
310 1 |
mW |
500 2 |
mW | ||
Thermal Resistance, Junction to Ambient |
RJA |
403 1 |
°C/W |
250 2 |
°C/W | ||
Junction Temperature |
Tj |
-55~+150 |
°C |
Storage Temperature |
Tstg |
-55~+150 |
°C |
The BTB589N3 is designed with high current gain and low saturation voltage with collector current up to 1A continuous.