BTB24-800B TO220

DescriptionThe BTB24-800B is a kind of 25A triacs. The snubberless versions (BTA/BTB.W and T25 series) BTB24-800B TO220 are specially recommended for use on inductive loads, thanks to their high commutation performances. By using an internal ceramic pad, the BTA series BTB24-800B TO220 provides vo...

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SeekIC No. : 004302861 Detail

BTB24-800B TO220: DescriptionThe BTB24-800B is a kind of 25A triacs. The snubberless versions (BTA/BTB.W and T25 series) BTB24-800B TO220 are specially recommended for use on inductive loads, thanks to their high com...

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Part Number:
BTB24-800B TO220
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

Description



Description

The BTB24-800B is a kind of 25A triacs. The snubberless versions (BTA/BTB.W and T25 series) BTB24-800B  TO220 are specially recommended for use on inductive loads, thanks to their high commutation performances. By using an internal ceramic pad, the BTA series BTB24-800B  TO220 provides voltage insulated tab (rated at 2500VRMS) complying with UL standards (File ref.: E81734). Available either in through-hole or surface-mount packages, the BTA24, BTB24, BTA25, BTA26 and T25 triac series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits. or for phase control operation in light dimmers, motor speed controllers.

The features of BTB24-800B can be summarized as (1)IT(RMS): 25 A; (2)VDRM/VRRM: 600 and 800 V; (3)IGT (Q 1 ): 35 to 50 mA.

The absolute maximum ratings of BTB24-800B are (1)IT(RMS) RMS on-state current (full sine wave) D2PAK /TO-220AB Tc = 100° C\; (2)RD91 /TOP3 Ins. Tc = 90° C\TO-220AB Ins. Tc = 75° C: 25A; (3)ITSM non repetitive surge peak on-state current (full cycle, Tj initial = 25° C) F = 50 Hz t = 20 ms\F = 60 Hz t = 16.7 ms: 250\260 A; (4)Tj operating junction temperature range: - 40 to + 125° C; (5)I2t I2t value for fusing tp = 10 ms: 340 A2s; (6)dI/dt critical rate of rise of on-state current IG = 2 x IGT , tr 100 ns F = 120 Hz Tj = 125° C: 50 A/s; (7)VDSM/VRSM non repetitive surge peak off-state voltage tp = 10 ms Tj = 25°: C VDSM/VRSM + 100 V; (8)IGM peak gate current tp = 20 s Tj = 125° C: 4 A; (9)PG(AV) Average gate power dissipation Tj = 125° C: 1 W; (10)Tstg storage junction temperature range: - 40 to + 150°C.




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