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BTB10 BW

Features: ·HIGH COMMUTATION : (dI/dt)c > 9A/ms without snubber .HIGH SURGE CURRENT : ITSM = 100A .VDRM UP TO 800V· BTA Family :INSULATINGVOLTAGE= 2500V(RMS)(UL RECOGNIZED : E81734)Specifications Symbol Parameter Value Unit IT(RMS) RMS on-state current(360° conduction angle) ...

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SeekIC No. : 004302826 Detail

BTB10 BW: Features: ·HIGH COMMUTATION : (dI/dt)c > 9A/ms without snubber .HIGH SURGE CURRENT : ITSM = 100A .VDRM UP TO 800V· BTA Family :INSULATINGVOLTAGE= 2500V(RMS)(UL RECOGNIZED : E81734)Specifications ...

BTB10 BW Data Sheet

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Part Number:
BTB10 BW
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

·HIGH COMMUTATION : (dI/dt)c > 9A/ms without snubber
.HIGH SURGE CURRENT : ITSM = 100A
.VDRM UP TO 800V
· BTA Family :
 INSULATINGVOLTAGE= 2500V(RMS)
 (UL RECOGNIZED : E81734)


Specifications

Symbol
Parameter
Value
 Unit
IT(RMS)
 RMS on-state current
(360° conduction angle)

BTA
Tc = 90
0
A

BTB
Tc = 100
ITSM
 Non repetitive surge peak on-state current
( Tj initial = 25 )
tp = 8.3 ms
105
A
tp = 10 ms
100
I2t
 I2t value
tp = 10 ms
50
A2s
dI/dt
 Critical rate of rise of on-state current
Gate supply : IG = 500mA diG/dt = 1A/s
Repetitive
F = 50 Hz
20
A/s
Non
Repetitive
100
Tstg
Tj
 Storage and operating junction temperature range
- 40 to + 150
- 40 to + 125

Tl
 Maximum lead temperature for soldering during 10 s at 4.5 mm from case
260

Symbol
Parameter
BTA / BTB10-... BW/CW
Unit
400
600
700
800
VDRM
VRRM
 Repetitive peak off-state voltage
Tj = 125
400
600
700
800
V



Description

The BTA/BTB10 BW/CW triac family are high performance glass passivated chips technology.

The SNUBBERLESS™ concept offer suppression of RC network and BTB10 BW is suitable for application such as phase control and static switching on inductive or resistive load.




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