Features: .LOW IGT = 5mA max .LOW IH = 15mA max .HIGH EFFICIENCY SWITCHING ·BTA Family :INSULATINGVOLTAGE= 2500V(RMS)(UL RECOGNIZED : E81734)Specifications Symbol Parameter Value Unit IT(RMS) RMS on-state current(360° conduction angle) BTA Tc = 75 8 A BTB Tc...
BTB08 SW: Features: .LOW IGT = 5mA max .LOW IH = 15mA max .HIGH EFFICIENCY SWITCHING ·BTA Family :INSULATINGVOLTAGE= 2500V(RMS)(UL RECOGNIZED : E81734)Specifications Symbol Parameter Value Unit ...
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Symbol |
Parameter |
Value |
Unit | ||
IT(RMS) |
RMS on-state current (360° conduction angle) |
BTA |
Tc = 75 |
8 |
A |
BTB |
Tc = 80 | ||||
ITSM |
Non repetitive surge peak on-state current ( Tj initial = 25 ) |
tp = 8.3 ms |
85 |
A | |
tp = 10 ms |
80 | ||||
I2t |
I2t value |
tp = 10 ms |
32 |
A2s | |
dI/dt |
Critical rate of rise of on-state current Gate supply : IG = 500mA diG/dt = 1A/s |
Repetitive F = 50 Hz |
20 |
A/s | |
Non Repetitive |
100 | ||||
Tstg Tj |
Storage and operating junction temperature range |
- 40 to + 150 - 40 to + 110 |
| ||
Tl |
Maximum lead temperature for soldering during 10 s at 4.5 mm from case |
260 |
Symbol |
Parameter |
BTA / BTB08- |
Unit | ||
400 TW/SW |
600400 TW/SW |
700400 TW/SW | |||
VDRM VRRM |
Repetitive peak off-state voltage Tj = 110 |
400 |
600 |
700 |
V |
The BTA/BTB08 TW/SW use high performance products glass passivated chips.
The low IGT / IH level coupled with the high efficiency circuit make BTB08 SW will adapted for low power trigger circuits (microcontrollers, microprocessors,integrated circuits ...)