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BTB06 TW

Features: .LOW IGT = 5mA max .LOW IH = 15mA max .HIGH EFFICIENCY SWITCHING`BTA Family :INSULATINGVOLTAGE= 2500V(RMS) (UL RECOGNIZED : E81734)Specifications Symbol Parameter Value Unit IT(RMS) RMS on-state current(360° conduction angle) BTA Tc = 80 6 A BTB Tc...

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BTB06 TW: Features: .LOW IGT = 5mA max .LOW IH = 15mA max .HIGH EFFICIENCY SWITCHING`BTA Family :INSULATINGVOLTAGE= 2500V(RMS) (UL RECOGNIZED : E81734)Specifications Symbol Parameter Value Unit ...

BTB06 TW Data Sheet

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Part Number:
BTB06 TW
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

.LOW IGT = 5mA max
.LOW IH = 15mA max
.HIGH EFFICIENCY SWITCHING
`BTA Family :
 INSULATINGVOLTAGE= 2500V(RMS) (UL RECOGNIZED : E81734)


Specifications

Symbol
Parameter
Value
 Unit
IT(RMS)
 RMS on-state current
(360° conduction angle)

BTA
Tc = 80
6
A

BTB
Tc = 90
ITSM
 Non repetitive surge peak on-state current
( Tj initial = 25 )
tp = 8.3 ms
63
A
tp = 10 ms
30
I2t
 I2t value
tp = 10 ms
18
A2s
dI/dt
 Critical rate of rise of on-state current
Gate supply : IG = 50mA diG/dt = 1A/s
Repetitive
F = 50 Hz
20
A/s
Non
Repetitive
100
Tstg
Tj
 Storage and operating junction temperature range
- 40 to + 150
- 40 to + 110

Tl
 Maximum lead temperature for soldering during 10 s at 4.5 mm from case
260

Symbol
Parameter
BTA / BTB06-
Unit
400TW/SW
600TW/SW
700TW/SW
 800TW/SW
VDRM
VRRM
 Repetitive peak off-state voltage
Tj = 110
400
600
700
800
V



Description

The BTA/BTB06 TW/SW use high performance products glass passivated chips.

The low IGT / IH level coupled with the high efficiency circuit BTB06 TW make this family will adapted for low power trigger circuits (microcontrollers, microprocessors, integrated circuits ...)




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