BTA216-600B

Breakover Current IBO Max :
On-State RMS Current (It RMS) :
Rated Repetitive Off-State Voltage VDRM : 600 V
Gate Trigger Current (Igt) : 50 mA
Mounting Style : Through Hole
Package / Case : TO-220AB
Off-State Leakage Current @ VDRM IDRM : 0.1 mA
Holding Current (Ih Max) : 60 mA
Gate Trigger Voltage (Vgt) : 1.5 V
Packaging : Rail


Application

·These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.


Pinout




Specifications

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.			UNIT
VDRM	Repetitive peak off-state voltages		-	-500 5001	-600 6001	-800 800	V
IT(RMS)	RMS on-state current	full sine wave; Ths 99	-	16			A
ITSM	Non-repetitive peak on-state current	full sine wave; Tj = 25 prior to surge t = 20 ms t = 16.7 ms	- -	140 150			A A
I2t	I2t for fusing	t = 10 ms	-	98			A2s
dIT/dt	Repetitive rate of rise of on-state current after triggering	ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/s		100			A/s
IGM	Peak gate current		-	2			A
VGM	Peak gate voltage		-	5			V
PGM	Peak gate power		-	5			W
PG(AV)	Average gate power	over any 20 ms period	-	0.5			W
Tstg	Storage temperature		-40	150
Tj	Operating junction temperature		-	125

Description

Glass passivated high commutationtriacs BTA216-600B in a plastic envelope intendedforuse in circuits wherehigh staticanddynamic dV/dt and high dI/dt canoccur. These devices will commutatethe full rated rms current at themaximum rated junction temperature,without the aid of a snubber.