BTA212X800E

DescriptionThe BTA212X-800E is one of the BTA212X-xxxE series.BTA212X800E is a three quadrant triacs high communtation,Glass passivated high commutation riacs in a plastic envelope intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur.These devices will commutat...

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SeekIC No. : 004302771 Detail

BTA212X800E: DescriptionThe BTA212X-800E is one of the BTA212X-xxxE series.BTA212X800E is a three quadrant triacs high communtation,Glass passivated high commutation riacs in a plastic envelope intended for use ...

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Part Number:
BTA212X800E
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Description



Description

The BTA212X-800E is one of the BTA212X-xxxE series.BTA212X800E is a three quadrant triacs high communtation,Glass  passivated  high  commutation riacs in a plastic envelope intended for use in circuits  where  high static and dynamic dV/dt and high dI/dt can occur.These devices will commutate the full ratedrms current at the maximum rated junction temperature,without the aid of a snubber.

The absolute maximum ratings of the BTA212X-800E can be summarized as:(1)repetitive peak off-state voltages,VDRM:800V;(2)RMS on-state current(full sine wave;Ths56),IT(RMS):2A;(3)non-repetitive peak on-state current:full sine wave,ITSM;Tj=25 proior to surge;(4)I2t for fusing,I2t:t=20ms...95At=16.7ms...105At=10ms...45A2S;(5)repetitive rate of rise of on-state current after triggering,dIT/dt(ITM=12A,IG=0.2A,dIG/dt=0.2A/S):100A/S;(6)peak gate current,IGM:2A;(7)peak gate voltage,VGM:5V;(8)peak gate power,PGM;(9)average gate power(over any 20ms period),PG(AV):0.5W;(10)storage temperature,Tstg:-40 to 150;(11)operating junction temperature,Tj:125.

If you want to know more information such as the electrical characteristics about the BTA212X-800E, please download the datasheet in www.seekic.com or www.chinaicmart.com .




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