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BTA212X-500B

Application·These products are not designed for use in life support appliances, devices or systems where malfunction of theseproducts can be reasonably expected to result in personal injury. Philips customers using or selling these productsfor use in such applications do so at their own risk and a...

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SeekIC No. : 004302769 Detail

BTA212X-500B: Application·These products are not designed for use in life support appliances, devices or systems where malfunction of theseproducts can be reasonably expected to result in personal injury. Philips...

BTA212X-500B Data Sheet

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Part Number:
BTA212X-500B
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/30

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Product Details

Description



Application

·These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDRM Repetitive peak off-state
voltages		 - -500
5001		 -600
6001		 -800
800		 V
IT(RMS) RMS on-state current full sine wave;
Ths 56 		- 12 A
ITSM Non-repetitive peak
on-state current		 full sine wave;
Tj = 25 prior to
surge
t = 20 ms
t = 16.7 ms
 -
-		 95
105		 A
A
I2t I2t for fusing t = 10 ms - 45 A2s
dIT/dt Repetitive rate of rise of
on-state current after
triggering		 ITM = 20 A; IG = 0.2 A;
dIG/dt = 0.2 A/s		 100 A/s
IGM Peak gate current - 2 A
VGM Peak gate voltage - 5 V
PGM Peak gate power - 5 W
PG(AV) Average gate power over any 20 ms
period		 - 0.5 W
Tstg Storage temperature -40 150
Tj Operating junction
temperature		 - 125



Description

Glass passivated high commutationtriacs BTA212X-500B in a full pack, plastic envelopeintended for use in circuits where highstatic and dynamic dV/dt and highdI/dt can occur. These devices willcommutate the full rated rms currentat the maximum rated junctiontemperature, without the aid of asnubber.




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