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BT258X

PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDRM, VRRMIT(AV)IT(RMS)ITSMI2tdIT/dtIGMVGMVRGMPGMPG(AV)TstgTj Repetitive peak off-state voltagesAverage on-state currentRMS on-state currentNon-repetitive peak on-state currentI2t for fusingRepetitive rate of rise ...

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SeekIC No. : 004302603 Detail

BT258X: PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDRM, VRRMIT(AV)IT(RMS)ITSMI2tdIT/dtIGMVGMVRGMPGMPG(AV)TstgTj Repetitive peak off-state voltagesAverage on-state c...

BT258X Data Sheet

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Part Number:
BT258X
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Description



Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS
MIN.
MAX.
UNIT
VDRM, VRRM
IT(AV)
IT(RMS)
ITSM
I2t
dIT/dt
IGM
VGM
VRGM
PGM
PG(AV)
Tstg
Tj		 Repetitive peak off-state voltages
Average on-state current
RMS on-state current
Non-repetitive peak on-state current
I2t for fusing
Repetitive rate of rise of on-state current after triggering
Peak gate current
Peak gate voltage
Peak reverse gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction temperature		 half sine wave; Tmb 90°C
all conduction angles
half sine wave; Tj = 25 °C prior to surge
t = 10 ms
t = 8.3 ms
t = 10 ms
ITM = 10 A; IG = 50 mA;
dIG/dt = 50 mA/s


over any 20 ms period

-
-
-
-
-
-
-
-
-
-
-
-
-40
-
-500R
5001
-600R
6001
-800R
800
V
A
A
A
A
A2S
A/S
A
V
V
W
W

5
8
75
82
28
50
2
5
5
5
0.5
150
1252



Description

Passivated, sensitive gate thyristors BT258X in a full pack, plastic envelope, intended for use in general purpose switching and phase control applications. BT258X are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.


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