PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDRM, VRRM Repetitive peak off-state voltages - E5001 G6001 V IT(AV) Average on-state current half sine wave;Tlead 83 °C - 0.5 A IT(RMS) RMS on-state current all conduc...
BT168: PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDRM, VRRM Repetitive peak off-state voltages - E5001 G6001 V IT(AV) Average on-state ...
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT | |
VDRM, VRRM |
Repetitive peak off-state voltages |
- |
E 5001 |
G 6001 |
V | |
IT(AV) |
Average on-state current | half sine wave;Tlead 83 °C |
- |
0.5 |
A | |
IT(RMS) |
RMS on-state current | all conduction angles |
- |
0.8 |
A | |
ITSM |
Non-repetitive peak on-state current |
t = 10 ms t = 8.3 ms half sine wave;Tj = 25 °C prior to surge |
- |
8 9 |
A A | |
I2t |
I2t for fusing | t = 10 ms |
- |
0.32 |
A2s | |
dIT/dt |
Repetitive rate of rise of on-state current after triggering | ITM = 2 A; IG = 10 mA; |
- |
50 |
A/s | |
IGM |
Peak gate current | dIG/dt = 100 mA/s |
- |
1 |
A | |
VGM |
Peak gate voltage |
- |
5 |
V | ||
VRGM |
Peak reverse gate voltage |
- |
5 |
V | ||
PGM |
Peak gate power |
- |
2 |
W | ||
PG(AV) |
Average gate power | over any 20 ms period |
- |
0.1 |
W | |
Tstg |
Storage temperature |
-40 |
150 |
°C | ||
Tj |
Operating junction temperature |
- |
125 |
°C |
Passivated, sensitive gate thyristors BT168 in a plastic envelope, intended for use in Residual Current Devices/ Ground Fault Interrupters/ Leakage Current Circuit Breakers (RCD/ GFI/ LCCB) applications where a minimum IGT limit is needed. These devices may be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.