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BT168

PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDRM, VRRM Repetitive peak off-state voltages - E5001 G6001 V IT(AV) Average on-state current half sine wave;Tlead 83 °C - 0.5 A IT(RMS) RMS on-state current all conduc...

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SeekIC No. : 004302590 Detail

BT168: PinoutSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDRM, VRRM Repetitive peak off-state voltages - E5001 G6001 V IT(AV) Average on-state ...

BT168 Data Sheet

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Part Number:
BT168
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Pinout

Connection Diagram


Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDRM, VRRM
 Repetitive peak off-state voltages  
-
E
5001
G
6001
V
IT(AV)
 Average on-state current half sine wave;Tlead 83 °C
-
0.5
A
IT(RMS)
 RMS on-state current all conduction angles
-
0.8
A
ITSM
 Non-repetitive peak
on-state current		 t = 10 ms
t = 8.3 ms
half sine wave;Tj = 25 °C prior to surge
-
8
9
A
A
I2t
 I2t for fusing t = 10 ms
-
0.32
A2s
dIT/dt
 Repetitive rate of rise of on-state current after triggering ITM = 2 A; IG = 10 mA;
-
50
A/s
IGM
 Peak gate current dIG/dt = 100 mA/s
-
1
A
VGM
 Peak gate voltage  
-
5
V
VRGM
 Peak reverse gate voltage  
-
5
V
PGM
 Peak gate power  
-
2
W
PG(AV)
 Average gate power over any 20 ms period
-
0.1
W
Tstg
 Storage temperature  
-40
150
°C
Tj
 Operating junction temperature  
-
125
°C
Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may
switch to the on-state. The rate of rise of current should not exceed 15 A/s.


Description

Passivated, sensitive gate thyristors BT168 in a plastic envelope, intended for use in Residual Current Devices/ Ground Fault Interrupters/ Leakage Current Circuit Breakers (RCD/ GFI/ LCCB) applications where a minimum IGT limit is needed. These devices may be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.




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