BT148W-400R

The BT148W-400R is designed as glass passivated, sensitive gate thyristors BT148W-400R in a plastic envelope suitable for surface mounting, intended for use in general purpose switching and phase control applications. BT148W-400R are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.

Some limiting values have been concluded into several points of BT148W-400R as follow. The first one is about its repetitive peak off-state voltage which would be 400V. The second one is about its RMS on-state current which would be 1A. The third one is about its non-repetitive peak on-state current which would be 10A at t=10ms and would be 11A at t=8.3ms. The fourth one is about its I2t for fusing at t=10ms which would be max 0.5 A2s. The fifth one is about its repetitive rate of rise of on-state current after triggering which would be 50 A/s. The sixth one is about its peak gate current which would be max 1A. The seventh one is about its peak gate voltage which would be max 5V. The eighth one is about its peak gate power which would be max 1.2W. The ninth one is about its average gate power which would be 0.12W over any 20ms period. The tenth one is about its storage temperature which would be from -40 to 150°C. The eleventh one is about its operating junction temperature which would be max 125°C.

Also some static characteristics about BT148W-400R. The first one is about its holding current which would be typ 0.1mA and max 6mA. The second one is about its on-state voltage which would be typ 1.3V and max 1.5V. The third one is about BT148W-400R gate trigger voltage which would be typ 0.4V and max 1.5V with condition of Vd=12V and It=0.1A and would be min 0.1V and typ 0.2V with condition of Vd=Vrrm and It=0.1A and Tj=110°C. The fourth one is about BT148W-400R off-state leakage current which would be typ 0.1mA and max 0.5mA. And so on. For more information please contact us.