PinoutSpecifications SYMBOL Parameter CONDITIONS MIN. Max Units VDRM, VRRMIT(AV)IT(RMS) ITSM I2t dIT/dt IGMVRGM PGM PG(AV)Tstg Tj Repetitive peak off-statevoltagesAverage on-state currentRMS on-state currentNon-repetitive peakon-state currentI2t for fusingRepetitive rate of rise...
BT148: PinoutSpecifications SYMBOL Parameter CONDITIONS MIN. Max Units VDRM, VRRMIT(AV)IT(RMS) ITSM I2t dIT/dt IGMVRGM PGM PG(AV)Tstg Tj Repetitive peak off-statevoltagesAverage on-state...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
SYMBOL | Parameter | CONDITIONS | MIN. |
Max |
Units | ||
VDRM, VRRM IT(AV) IT(RMS) ITSM I2t dIT/dt IGM VRGM PGM PG(AV) Tstg Tj |
Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature |
half sine wave; Tmb113 all conduction angles half sine wave; Tj = 25 prior to surge t = 10 ms t = 8.3 ms t = 10 ms ITM = 10 A; IG = 50 mA; dIG/dt = 50 mA/s over any 20 ms period |
- - - - - - - - - - - - -40 - |
-400R 4001 |
-500R 5001 |
-600R 6001 |
V A A A2s A/s A A V V W |
2.5 4 35 38 6.1 50 2 5 5 5 0.5 150 |
Glass passivated, sensitive gate thyristors BT148 in a plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.