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BST40

Features: · Low current (max. 100 mA)· High voltage (max. 350 V).Application· General purpose switching and amplification.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltageBST39BST40 open emitter -- 400300 VV VCEO collector-emitter voltageBS...

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SeekIC No. : 004302439 Detail

BST40: Features: · Low current (max. 100 mA)· High voltage (max. 350 V).Application· General purpose switching and amplification.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO ...

BST40 Data Sheet

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Part Number:
BST40
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/9/27

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Product Details

Description



Features:

· Low current (max. 100 mA)
· High voltage (max. 350 V).


Application

· General purpose switching and amplification.


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage
BST39
BST40		 open emitter -
-		 400
300		 V
V
VCEO collector-emitter voltage
BST39
BST40		 open base -
-		 350
250		 V
V
VEBO emitter-base voltage open collector - 5 V
IC collector current (DC)   - 100 mA
ICM peak collector current   - 200 mA
IBM peak base current   - 100 mA
Ptot total power dissipation Tamb 25 °C; note 1 - 1.3 W
Tstg storage temperature   -65 +150
Tj junction temperature   - 150
Tamb operating ambient temperature   -65 +150

Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see "Thermal considerations for SOT89 in the General Part of associated Handbook




Description

NPN high-voltage transistor BST40 in a SOT89 plastic package.

PNP complements: BST15 and BST16.


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