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BSS92

MOSFET 200V 0.15A 1.0W

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SeekIC No. : 00166238 Detail

BSS92: MOSFET 200V 0.15A 1.0W

BSS92 Data Sheet

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Part Number:
BSS92
Mfg:
Vishay/Siliconix
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/9/27

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 200 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 0.12 A
Resistance Drain-Source RDS (on) : 20000 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-18-3 Packaging : Reel    

Description

Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Packaging : Reel
Mounting Style : Through Hole
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 200 V
Continuous Drain Current : 0.12 A
Resistance Drain-Source RDS (on) : 20000 mOhms
Package / Case : TO-18-3


Features:

High-Side Switching
Secondary Breakdown Free: 220 V
Low On-Resistance: 11.5
Low-Power/Voltage Driven
Excellent Thermal Stability


Application

Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc.
Power Supply, Converters
Motor Control
Switches


Specifications

ABSOLUTE MAXIMUM RATINGS (TC = 25 UNLESS OTHERWISE NOTED)
Parameter
Symbol
VP2020L
BSS92
Unit
Drain-Source Voltage
VDS
200
200
V
Gate-Source Voltage
VGS
±20
±20
Continuous Drain Currentd
(TJ = 175)
TA = 25
ID
0.12
0.15
A
TA = 100
0.08
0.09
Pulsed Drain Current
IDM
0.48
0.6
Power Dissipation
TA = 25
PD
0.8
1.0
W
TA = 100
0.32
0.4
Thermal Resistance, Junction-to-Ambient
RthJA
156
125
/W
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 175



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