MOSFET N-CH DMOS 200V 0.4A
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 0.4 A | ||
Resistance Drain-Source RDS (on) : | 3000 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-89 | Packaging : | Reel |
Technical/Catalog Information | BSS87,115 |
Vendor | NXP Semiconductors |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 200V |
Current - Continuous Drain (Id) @ 25° C | 400mA |
Rds On (Max) @ Id, Vgs | 3 Ohm @ 400mA, 10V |
Input Capacitance (Ciss) @ Vds | 120pF @ 25V |
Power - Max | 1W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | - |
Package / Case | SOT-89-3, TO-243-3 |
FET Feature | Standard |
Drawing Number | 568; SOT89; ; 3 |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BSS87,115 BSS87,115 |