BSS87E6327

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Power - Max: 1W
Drain to Source Voltage (Vdss): 240V
Packaging: Cut Tape (CT)
Current - Continuous Drain (Id) @ 25° C: 260mA
Gate Charge (Qg) @ Vgs: 5.5nC @ 10V
Package / Case: TO-243AA
Series: SIPMOS®
Manufacturer: Infineon Technologies
Rds On (Max) @ Id, Vgs: 6 Ohm @ 260mA, 10V
Vgs(th) (Max) @ Id: 1.8V @ 108µA
Input Capacitance (Ciss) @ Vds: 97pF @ 25V
Supplier Device Package: P-SOT89-4


Parameters:

Technical/Catalog Information	BSS87E6327
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	240V
Current - Continuous Drain (Id) @ 25° C	260mA
Rds On (Max) @ Id, Vgs	6 Ohm @ 260mA, 10V
Input Capacitance (Ciss) @ Vds	97pF @ 25V
Power - Max	1W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	5.5nC @ 10V
Package / Case	SOT-89
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BSS87E6327 BSS87E6327 BSS87INTR ND BSS87INTRND BSS87INTR