MOSFET 50V 130mA P-Channel
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Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 50 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 0.13 A | ||
Resistance Drain-Source RDS (on) : | 10000 mOhms at 5 V | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-23 | Packaging : | Reel |
Technical/Catalog Information | BSS84LT1G |
Vendor | ON Semiconductor (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | P-Channel |
Drain to Source Voltage (Vdss) | 50V |
Current - Continuous Drain (Id) @ 25° C | 130mA |
Rds On (Max) @ Id, Vgs | 10 Ohm @ 100mA, 5V |
Input Capacitance (Ciss) @ Vds | 30pF @ 5V |
Power - Max | 225mW |
Packaging | Digi-Reel? |
Gate Charge (Qg) @ Vgs | - |
Package / Case | SOT-23-3, TO-236-3, Micro3?, SSD3, SST3 |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BSS84LT1G BSS84LT1G BSS84LT1GOSDKR ND BSS84LT1GOSDKRND BSS84LT1GOSDKR |