MOSFET 60 / -50V 200mW
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Transistor Polarity : | N and P-Channel | Drain-Source Breakdown Voltage : | 70 V, -50 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 115 mA, -130 mA | ||
Resistance Drain-Source RDS (on) : | 4.4 Ohms | Configuration : | Dual | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-363 | Packaging : | Reel |
Technical/Catalog Information | BSS8402DW-7 |
Vendor | Diodes Inc |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N and P-Channel |
Drain to Source Voltage (Vdss) | 60V, 50V |
Current - Continuous Drain (Id) @ 25° C | 115mA, 130mA |
Rds On (Max) @ Id, Vgs | 7.5 mOhm @ 50mA, 5V |
Input Capacitance (Ciss) @ Vds | 50pF @ 25V |
Power - Max | 200mW |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | - |
Package / Case | SC-70-6, SC-88, SOT-323-6, SOT-363 |
FET Feature | Logic Level Gate |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | BSS8402DW 7 BSS8402DW7 BSS8402DWDITR ND BSS8402DWDITRND BSS8402DWDITR |