MOSFET 60 / -50V 200mW
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Transistor Polarity : | N and P-Channel | Drain-Source Breakdown Voltage : | 60 V at N Channel, 50 V at P Channel | ||
Gate-Source Breakdown Voltage : | +/- 20 V, +/- 20 V | Continuous Drain Current : | 0.115 A at N Channel, 0.13 A at P Channel | ||
Resistance Drain-Source RDS (on) : | 7500 mOhms at 5 V at N Channel, 10000 mOhms at 5 V at P Channel | Configuration : | Dual | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SOT-363 | Packaging : | Reel |
Technical/Catalog Information | BSS8402DW-7-F |
Vendor | Diodes Inc (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N and P-Channel |
Drain to Source Voltage (Vdss) | 60V, 50V |
Current - Continuous Drain (Id) @ 25° C | 115mA, 130mA |
Rds On (Max) @ Id, Vgs | 7.5 mOhm @ 50mA, 5V |
Input Capacitance (Ciss) @ Vds | 50pF @ 25V |
Power - Max | 200mW |
Packaging | Digi-Reel? |
Gate Charge (Qg) @ Vgs | - |
Package / Case | SC-70-6, SC-88, SOT-323-6, SOT-363 |
FET Feature | Logic Level Gate |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BSS8402DW 7 F BSS8402DW7F BSS8402DW FDIDKR ND BSS8402DWFDIDKRND BSS8402DW-FDIDKR |