Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 60V
Packaging: Cut Tape (CT)
Power - Max: 360mW
Series: SIPMOS®
Manufacturer: Infineon Technologies
Supplier Device Package: PG-SOT23-3
Input Capacitance (Ciss) @ Vds: 78pF @ 25V
Current - Continuous Drain (Id) @ 25° C: 330mA
Rds On (Max) @ Id, Vgs: 2 Ohm @ 330mA, 10V
Vgs(th) (Max) @ Id: 2V @ 80µA
Gate Charge (Qg) @ Vgs: 3.57nC @ 10V
Parameters: | Technical/Catalog Information | BSS83PE6327 |
| Vendor | Infineon Technologies (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 330mA |
| Rds On (Max) @ Id, Vgs | 2 Ohm @ 330mA, 10V |
| Input Capacitance (Ciss) @ Vds | 78pF @ 25V |
| Power - Max | 360mW |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 3.57nC @ 10V |
| Package / Case | SOT-23 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | BSS83PE6327
BSS83PE6327
BSS83PE6327INCT ND
BSS83PE6327INCTND
BSS83PE6327INCT
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BSS83PE6327 Data Sheet
