FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Current - Continuous Drain (Id) @ 25° C: 200mA
Drain to Source Voltage (Vdss): 60V
Gate Charge (Qg) @ Vgs: 1.5nC @ 10V
Packaging: Cut Tape (CT)
Rds On (Max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
Power - Max: 360mW
Series: SIPMOS®
Manufacturer: Infineon Technologies
Supplier Device Package: PG-SOT23-3
Vgs(th) (Max) @ Id: 2.3V @ 26µA
Input Capacitance (Ciss) @ Vds: 56pF @ 25V
Features: · N-Channel
· Enhancement mode
· Logic Level
· dv/dt ratedSpecifications
| Parameter |
Symbol |
Value |
Unit |
Continuous drain current
TA=25
TA=70 |
I D |
0.2
0.16 |
A |
Pulsed drain current
TA=25 |
I D,pulse |
0.8 |
Reverse diode dv /dt
IS=-0.2A, VDS=48V, di/dt=-200A/s, Tjmax=150 |
dv /dt |
6 |
kV/s |
| Gate source voltage |
VGS |
±20 |
V |
Power dissipation
TA=25 |
Ptot |
0.36 |
W |
| Operating and storage temperature |
T j, T stg |
-55... +150 |
|
| IEC climatic category; DIN IEC 68-1 |
|
55/150/56 |
|
Parameters: | Technical/Catalog Information | BSS7728N |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 200mA |
| Rds On (Max) @ Id, Vgs | 5 Ohm @ 500mA, 10V |
| Input Capacitance (Ciss) @ Vds | 56pF @ 25V |
| Power - Max | 360mW |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 1.5nC @ 10V |
| Package / Case | SOT-23 |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | BSS7728N
BSS7728N
BSS7728NINTR ND
BSS7728NINTRND
BSS7728NINTR
|
BSS7728N Data Sheet
