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BSS64LT1G

Transistors Bipolar (BJT) 100mA 120V NPN

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SeekIC No. : 00204891 Detail

BSS64LT1G: Transistors Bipolar (BJT) 100mA 120V NPN

BSS64LT1G Data Sheet

floor Price/Ceiling Price

US $ .05~.19 / Piece | Get Latest Price
Part Number:
BSS64LT1G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.19
  • $.09
  • $.06
  • $.05
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/9/26

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 80 V
Emitter- Base Voltage VEBO : 5 V Maximum DC Collector Current : 0.1 A
DC Collector/Base Gain hfe Min : 20 at 10 mA at 1 V Configuration : Single
Maximum Operating Frequency : 60 MHz (Min) Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SOT-23
Packaging : Reel    

Description

Transistor Polarity : NPN
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Emitter- Base Voltage VEBO : 5 V
Maximum DC Collector Current : 0.1 A
Package / Case : SOT-23
Collector- Emitter Voltage VCEO Max : 80 V
Maximum Operating Frequency : 60 MHz (Min)
DC Collector/Base Gain hfe Min : 20 at 10 mA at 1 V


Parameters:

Technical/Catalog InformationBSS64LT1G
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)80V
Current - Collector (Ic) (Max)100mA
Power - Max300mW
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic150mV @ 400A, 4mA
Frequency - Transition60MHz
Current - Collector Cutoff (Max)-
Mounting TypeSurface Mount
Package / CaseSOT-23-3, TO-236-3, Micro3?, SSD3, SST3
PackagingCut Tape (CT)
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names BSS64LT1G
BSS64LT1G
BSS64LT1GOSCT ND
BSS64LT1GOSCTND
BSS64LT1GOSCT



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