Transistors Bipolar (BJT) 100mA 110V PNP
BSS63LT1G: Transistors Bipolar (BJT) 100mA 110V PNP
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 100 V |
Emitter- Base Voltage VEBO : | 6 V | Maximum DC Collector Current : | 0.1 A |
DC Collector/Base Gain hfe Min : | 30 at 10 mA at 1 V | Configuration : | Single |
Maximum Operating Frequency : | 95 MHz | Maximum Operating Temperature : | + 150 C |
Mounting Style : | SMD/SMT | Package / Case : | SOT-23 |
Packaging : | Reel |
Technical/Catalog Information | BSS63LT1G |
Vendor | ON Semiconductor |
Category | Discrete Semiconductor Products |
Transistor Type | PNP |
Voltage - Collector Emitter Breakdown (Max) | 100V |
Current - Collector (Ic) (Max) | 100mA |
Power - Max | 300mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 1V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 2.5mA, 25mA |
Frequency - Transition | 95MHz |
Current - Collector Cutoff (Max) | 10A |
Mounting Type | Surface Mount |
Package / Case | SOT-23-3, TO-236-3, Micro3?, SSD3, SST3 |
Packaging | Tape & Reel (TR) |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | BSS63LT1G BSS63LT1G BSS63LT1GOSTR ND BSS63LT1GOSTRND BSS63LT1GOSTR |