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BSS62

Features: · High current (max. 1 A)· Low voltage (max. 80 V)· Integrated diode and resistor.Application· Industrial high gain amplificationSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage BSS61 BSS62 open emitter -80 -90...

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SeekIC No. : 004302409 Detail

BSS62: Features: · High current (max. 1 A)· Low voltage (max. 80 V)· Integrated diode and resistor.Application· Industrial high gain amplificationSpecifications SYMBOL PARAMETER CONDITIONS ...

BSS62 Data Sheet

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Part Number:
BSS62
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· High current (max. 1 A)
· Low voltage (max. 80 V)
· Integrated diode and resistor.


Application

· Industrial high gain amplification


Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
BSS61
BSS62
open emitter

-80

-90

V

V

VCES
collector-emitter voltage
BSS61
BSS62
VBE = 0

-60

-80

V

V

VEBO
emitter-base voltage
open collector
-5
V
IC
collector current (DC)
-1
A
ICM
peak collector current
-2
A
IB
base current (DC)
-100
mA
Ptot
total power dissipation
Tamb 25 °C
0.8
W
Tcase 25 °C
5
W
Tstg
storage temperature
-65
+150
°C
Tj
junction temperature
200
°C
Tamb
operating ambient temperature
-65
+150
°C



Description

PNP Darlington transistor BSS62 in a TO-39 metal package. NPN complements: BSS51 and BSS52.


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