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BSS50

Features: · High current (max. 1 A)· Low voltage (max. 80 V)· Integrated diode and resistor.Application·Industrial high gain amplificationSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage BSS50BSS51 BSS52 open emitter 60 ...

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SeekIC No. : 004302405 Detail

BSS50: Features: · High current (max. 1 A)· Low voltage (max. 80 V)· Integrated diode and resistor.Application·Industrial high gain amplificationSpecifications SYMBOL PARAMETER CONDITIONS M...

BSS50 Data Sheet

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Part Number:
BSS50
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/28

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Product Details

Description



Features:

· High current (max. 1 A)
· Low voltage (max. 80 V)
· Integrated diode and resistor.


Application

·Industrial high gain amplification


Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
BSS50
BSS51
BSS52
open emitter

60

80

90

V

V

V

VCES
collector-emitter voltage
BSS50
BSS51
BSS52
VBE = 0

45

60

80

V

V

V

VEBO
emitter-base voltage
open collector
5
V
IC
collector current (DC)
1
A
ICM
peak collector current
2
A
IB
base current (DC)
100
mA
Ptot
total power dissipation
Tamb 25 °C
0.8
W
Tcase 25 °C
5
W
Tstg
storage temperature
-65
+150
°C
Tj
junction temperature
200
°C
Tamb
operating ambient temperature
-65
+150
°C



Description

NPN Darlington transistor BSS50 in a TO-39 metal package. PNP complements: BSS61 and BSS62


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