BSR58,215

Forward Transconductance gFS (Max / Min) :
Continuous Drain Current :
Configuration : Single
Transistor Polarity : N-Channel
Maximum Operating Temperature : + 150 C
Packaging : Reel
Mounting Style : SMD/SMT
Package / Case : SOT-23
Power Dissipation : 250 mW
Drain Source Voltage VDS : 40 V
Gate-Source Breakdown Voltage : 40 V
Maximum Drain Gate Voltage : 40 V
Resistance Drain-Source RDS (on) : 60 Ohms
Gate-Source Cutoff Voltage : 0.8 V to 4 V
Drain Current (Idss at Vgs=0) : 8 mA to 80 mA


Parameters:

Technical/Catalog Information	BSR58,215
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	40V
Current - Drain (Idss) @ Vds (Vgs=0)	8mA @ 15V
Gate to Source Voltage (Vgs Max)	*
Input Capacitance (Ciss) @ Vds	-
Power - Max	250mW
Packaging	Tape & Reel (TR)
Package / Case	SOT-23
Voltage - Cutoff (VGS off) @ Id	800mV @ 0.5nA
Voltage - Breakdown (V(BR)GSS)	40V
Resistance - RDS(On)	60 Ohm
Current Drain (Id) - Max	-
Drawing Number	568; SOT23; ; 3
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BSR58,215 BSR58,215