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BSR52

Features: · High current (max. 1 A)· Low voltage (max. 80 V)· Integrated diode and resistorApplication· Industrial high gain amplification.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter 90 V V VC...

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SeekIC No. : 004302358 Detail

BSR52: Features: · High current (max. 1 A)· Low voltage (max. 80 V)· Integrated diode and resistorApplication· Industrial high gain amplification.Specifications SYMBOL PARAMETER CONDITIONS ...

BSR52 Data Sheet

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Part Number:
BSR52
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/9/27

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Product Details

Description



Features:

· High current (max. 1 A)
· Low voltage (max. 80 V)
· Integrated diode and resistor


Application

· Industrial high gain amplification.


Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter

90

V

V

VCEO
collector-emitter voltage
VBE = 0

80

V

V

VEBO
emitter-base voltage
open collector
5
V
IC
collector current (DC)
1
A
ICM
peak collector current
2
A
IB
base current (DC)
100
mA
Ptot
total power dissipation
Tamb 25 °C; note 1
830
W
Tstg
storage temperature
-65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
-65
+150
°C



Description

The BSR52 features are as follows:

·NPN Darlington transistor in a TO-92; SOT54 plastic
·package. PNP complement: BSR62




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