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BSR30

Features: · High current (max. 1 A)· Low voltage (max. 80 V).Application· Telephony and general industrial applications· Thick and thin-film circuits.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitterBSR30; BSR31BSR33 ...

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SeekIC No. : 004302351 Detail

BSR30: Features: · High current (max. 1 A)· Low voltage (max. 80 V).Application· Telephony and general industrial applications· Thick and thin-film circuits.Specifications SYMBOL PARAMETER CON...

BSR30 Data Sheet

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Part Number:
BSR30
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

· High current (max. 1 A)
· Low voltage (max. 80 V).


Application

· Telephony and general industrial applications
· Thick and thin-film circuits.


Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage open emitter
BSR30; BSR31
BSR33
open emitter

-70

-90

V

V

VCEO
collector-emitter voltage open base
BSR30; BSR31
BSR33
open base

-60

-80

V

V

VEBO
emitter-base voltage
open collector
-5
V
IC
collector current (DC)
-1
A
ICM
peak collector current
-2
A
IBM
peak base current
-200
mA
Ptot
total power dissipation
Tamb 25 °C; note 1
1.35
W
Tstg
storage temperature
-65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
-65
+150
°C

1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm 2. For other mounting conditions, see "Thermal considerations for SOT89 in the General Part of associated Handbook".




Description

PNP medium power transistor BSR30 in a SOT89 plastic package. NPN complements: BSR40; BSR41 and BSR43.


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