Features: · Low current (max. 300 mA)· High voltage (max. 150 V).Application· General purpose switching and amplification· Telephony applications.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitterBSR30; BSR31BSR33 ope...
BSR20: Features: · Low current (max. 300 mA)· High voltage (max. 150 V).Application· General purpose switching and amplification· Telephony applications.Specifications SYMBOL PARAMETER CONDITI...
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
VCBO |
collector-base voltage open emitter BSR30; BSR31 BSR33 |
open emitter |
-130 -160 |
V V | |
VCEO |
collector-emitter voltage open base BSR30; BSR31 BSR33 |
open base |
-120 -150 |
V V | |
VEBO |
emitter-base voltage |
open collector |
-5 |
V | |
IC |
collector current (DC) |
-300 |
A | ||
ICM |
peak collector current |
-600 |
A | ||
IBM |
peak base current |
-100 |
mA | ||
Ptot |
total power dissipation |
Tamb 25 °C; note 1 |
250 |
W | |
Tstg |
storage temperature |
-65 |
+150 |
°C | |
Tj |
junction temperature |
150 |
°C | ||
Tamb |
operating ambient temperature |
-65 |
+150 |
°C |
The BSR20 features are as follows:
·PNP high-voltage transistor in a SOT23 plastic package.
·NPN complements: BSR19 and BSR19A.