Features: · Low current (max. 300 mA)· High voltage (max. 160 V).Application· General purpose switching and amplification· Especially used for telephony applications.Specifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitterBSR3...
BSR19: Features: · Low current (max. 300 mA)· High voltage (max. 160 V).Application· General purpose switching and amplification· Especially used for telephony applications.Specifications SYMBOL ...
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SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
VCBO |
collector-base voltage open emitter BSR30; BSR31 BSR33 |
open emitter |
160 180 |
V V | |
VCEO |
collector-emitter voltage open base BSR30; BSR31 BSR33 |
open base |
140 160 |
V V | |
VEBO |
emitter-base voltage |
open collector |
6 |
V | |
IC |
collector current (DC) |
300 |
A | ||
ICM |
peak collector current |
600 |
A | ||
IBM |
peak base current |
100 |
mA | ||
Ptot |
total power dissipation |
Tamb 25 °C; note 1 |
250 |
W | |
Tstg |
storage temperature |
-65 |
+150 |
°C | |
Tj |
junction temperature |
150 |
°C | ||
Tamb |
operating ambient temperature |
-65 |
+150 |
°C |
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm 2. For other mounting conditions, see "Thermal considerations for SOT89 in the General Part of associated Handbook".
The BSR19 features are as follows:
·NPN high-voltage transistor in a SOT23 plastic package.
·PNP complements: BSR20 and BSR20A.