BSR17A

Transistor Polarity : NPN
DC Collector/Base Gain hfe Min : 100
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Emitter- Base Voltage VEBO : 6 V
Maximum Operating Frequency : 300 MHz
Package / Case : SOT-23
Collector- Emitter Voltage VCEO Max : 40 V
Maximum DC Collector Current : 0.2 A


Specifications

Symbol	Parameter	Value	Units
VCEO	Collector-Emitter Voltage	40	V
VCBO	Collector-Base Voltage	60	V
VEBO	Emitter-Base Voltage	6.0	V
IC	Collector Current - Continuous	200	mA
TJ, Tstg	Operating and Storage Junction Temperature Range	-55 to +150	°C

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Description

BSR17A is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23.

Parameters:

Technical/Catalog Information	BSR17A
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	40V
Current - Collector (Ic) (Max)	200mA
Power - Max	350mW
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic	200mV @ 10mA, 1A
Frequency - Transition	300MHz
Current - Collector Cutoff (Max)	50nA
Mounting Type	Surface Mount
Package / Case	SOT-23
Packaging	Tape & Reel (TR)
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BSR17A BSR17A BSR17ATR ND BSR17ATRND BSR17ATR