BSP615S2L

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Gate Charge (Qg) @ Vgs: 10nC @ 10V
Power - Max: 1.8W
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25° C: 2.8A
Package / Case: TO-261-4, TO-261AA
Drain to Source Voltage (Vdss): 55V
Input Capacitance (Ciss) @ Vds: 330pF @ 25V
Manufacturer: Infineon Technologies
Series: OptiMOS™
Supplier Device Package: PG-SOT223-4
Rds On (Max) @ Id, Vgs: 90 mOhm @ 1.4A, 10V
Vgs(th) (Max) @ Id: 2V @ 12µA


Features:

• N-Channel
• Enhancement mode
• Logic Level

Specifications

Parameter	Symbol	Value	Unit
Continuous drain current TA=25°C TA=70°C	ID	2.8 2.3	A
Pulsed drain current TA=25°C	I D puls	11
Gate source voltage	V GS	± 20
Power dissipation TA=25°C	Ptot	1.8	V
Operating and storage temperature	Tj , Tstg	-55... +150	W
IEC climatic category; DIN IEC 68-1		55/150/00	°C

Parameters:

Technical/Catalog Information	BSP615S2L
Vendor	Infineon Technologies
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	2.8A
Rds On (Max) @ Id, Vgs	90 mOhm @ 1.4A, 10V
Input Capacitance (Ciss) @ Vds	330pF @ 25V
Power - Max	1.8W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	10nC @ 10V
Package / Case	SOT-223, SC-73, TO-261 (3 Leads + Tab)
FET Feature	Logic Level Gate
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BSP615S2L BSP615S2L