Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.8W
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) @ Vds: 160pF @ 25V
Series: SIPMOS®
Manufacturer: Infineon Technologies
Supplier Device Package: PG-SOT223-4
Current - Continuous Drain (Id) @ 25° C: 1.17A
Rds On (Max) @ Id, Vgs: 800 mOhm @ 1.17A, 10V
Vgs(th) (Max) @ Id: 2V @ 160µA
Gate Charge (Qg) @ Vgs: 7.8nC @ 10V
Parameters: | Technical/Catalog Information | BSP315PE6327T |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 1.17A |
| Rds On (Max) @ Id, Vgs | 800 mOhm @ 1.17A, 10V |
| Input Capacitance (Ciss) @ Vds | 160pF @ 25V |
| Power - Max | 1.8W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 7.8nC @ 10V |
| Package / Case | SOT-223, SC-73, TO-261 (3 Leads + Tab) |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | BSP315PE6327T
BSP315PE6327T
BSP315PXTINTR ND
BSP315PXTINTRND
BSP315PXTINTR
|
BSP315PE6327T Data Sheet
