BSP19AT1

Transistor Polarity : NPN
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Emitter- Base Voltage VEBO : 5 V
Package / Case : SOT-223
Maximum DC Collector Current : 0.1 A
Configuration : Single Dual Collector
Collector- Emitter Voltage VCEO Max : 350 V
Maximum Operating Frequency : 70 MHz (Min)
DC Collector/Base Gain hfe Min : 40 at 20 mA at 10 V


Specifications

Parameter	Symbol	BSP19A	BSP20A	Unit
Collector-Base Voltage	VCBO	350	250	V
Collector-Emitter Voltage	VCEO	400	300
Emitter-Base Voltage	VEBO	5.0
Collector Current	IC	1000		A
Total Device Dissipation, TA = 25°C (1)	PD	0.8 6.4		Watts mW/°C
Storage Temperature Range	Tstg	65 to 150		°C
Junction Temperature	Tj	150		°C

1. 1. Device mounted on a FR-4 glass epoxy printed circuit board using minimum recommended footprint.

Description

This family of NPN Silicon Epitaxial transistors BSP19AT1 is designed for use as a general purpose amplifier and in switching applications. The BSP19AT1 is housed in the SOT-223 package which is designed for medium power surface mount applications.
• High Voltage: V(BR)CEO of 250 and 350 Volts.
• The SOT-223 package can be soldered using wave or reflow.
• SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die
• Available in 12 mm Tape and Reel T1 Configuration 7 inch/1000 unit reel T3 Configuration 13 inch/4000 unit reel
• PNP Complement is BSP16T1

Parameters:

Technical/Catalog Information	BSP19AT1
Vendor	ON Semiconductor
Category	Transistors, FETs, IGBTs
Mounting Type	Surface (SMD, SMT)
Package Name	* SOT-223, 3-lead + Tab
Package Name	SOT-223
Package Name	TO-261AA
Transistor Type	NPN
Collector Emitter Voltage (Vceo)	350.0 V [Max]
Collector Base Voltage (Vcbo)	400.0 V [Max]
Collector Current (Ic)	1.00 A [Max]
Minimum DC Current Gain (hFE) @ Ic, Vce	40 @ 20mA, 10V
Saturation Voltage (Vce) @ Ib, Ic	500mV @ 4mA, 50mA
Saturation Voltage (Vbe) @ Ib, Ic	1.3V @ 4mA, 50mA
Transition Frequency	70.0 MHz [Nom]
Power Dissipation	800.000 mW [Max]
Packaging	Tape & Reel
Has Digi-Reel	TRUE
Operating Junction Temperature	-65 °C [Min]
Operating Junction Temperature	150 °C [Max]
Operating Temperature	-65 °C [Min]
Operating Temperature	150 °C [Max]
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BSP19AT1 BSP19AT1 BSP19AT1OSTR ND BSP19AT1OSTRND BSP19AT1OSTR