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BSP145

Features: · Direct interface to C-MOS, TTL, etc.· High speed switching· No secondary breakdown.Application· Intended for applications in relay, high speed and line transformer driversSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage ...

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SeekIC No. : 004302294 Detail

BSP145: Features: · Direct interface to C-MOS, TTL, etc.· High speed switching· No secondary breakdown.Application· Intended for applications in relay, high speed and line transformer driversSpecifications ...

BSP145 Data Sheet

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Part Number:
BSP145
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

· Direct interface to C-MOS, TTL, etc.
· High speed switching
· No secondary breakdown.


Application

· Intended for applications in relay, high speed and line transformer drivers


Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
450
V
±VGSO
gate-source voltage
open drain
±20
V
ID
DC drain current
250
mA
IDM
peak drain current
1
A
Ptot
total power dissipation
up to Tamb = 25 °C; note 1
1.5
W
Tstg
storage temperature
-65
+150
°C
Tj
operating junction temperature
150
°C

Note to the "Limiting values" and "Thermal characteristics"
1. Device mounted on an epoxy printed-circuit board, 40x 40 x1.5 mm; mounting pad for drain lead minimum 6 cm 2..




Description

N-channel enhancement mode vertical D-MOS transistor BSP145 in a SOT223 plastic SMD package.


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