BSP130,115

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 350 mA
Package / Case : SOT-223
Configuration : Single Dual Drain
Drain-Source Breakdown Voltage : 300 V
Resistance Drain-Source RDS (on) : 6 Ohms


Parameters:

Technical/Catalog Information	BSP130,115
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	300V
Current - Continuous Drain (Id) @ 25° C	350mA
Rds On (Max) @ Id, Vgs	6 Ohm @ 250mA, 10V
Input Capacitance (Ciss) @ Vds	120pF @ 25V
Power - Max	1.5W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	-
Package / Case	SOT-223, SC-73, TO-261 (3 Leads + Tab)
FET Feature	Logic Level Gate
Drawing Number	568; SOT223; ;
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BSP130,115 BSP130,115