BSP128

Features: · Direct interface to C-MOS, TTL, etc.· High-speed switching· No secondary breakdownSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage 200 V ±VGSO gate-source voltage open drain 20 V ID ...

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BSP128 Picture
SeekIC No. : 004302290 Detail

BSP128: Features: · Direct interface to C-MOS, TTL, etc.· High-speed switching· No secondary breakdownSpecifications SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source...

floor Price/Ceiling Price

Part Number:
BSP128
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/9/27

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Product Details

Description



Features:

· Direct interface to C-MOS, TTL, etc.
· High-speed switching
· No secondary breakdown



Specifications

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
drain-source voltage
200
V
±VGSO
gate-source voltage
open drain
20
V
ID
DC drain current
350
mA
IDM
peak drain current
1.4
A
Ptot
total power dissipation
up to Tamb = 25 °C; note 1
1.5
W
Tstg
storage temperature
-65
150
°C
Tj
operating junction temperature
150
°C

Note
1. Device mounted on an epoxy printed-circuit board, 40 x 40 x 1.5 mm, mounting pad for the drain tab minimum 6 cm2.




Description

N-channel enhancement mode vertical D-MOS transistor BSP128 in a SOT223 envelope and intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers.




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