FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 100V
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Current - Continuous Drain (Id) @ 25° C: 370mA
Input Capacitance (Ciss) @ Vds: 70pF @ 25V
Gate Charge (Qg) @ Vgs: 2.4nC @ 10V
Series: SIPMOS®
Manufacturer: Infineon Technologies
Vgs(th) (Max) @ Id: 1.8V @ 50µA
Rds On (Max) @ Id, Vgs: 6 Ohm @ 370mA, 10V
Power - Max: 1.79W
Supplier Device Package: PG-SOT223-4
Parameters: | Technical/Catalog Information | BSP123E6327T |
| Vendor | Infineon Technologies |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25° C | 370mA |
| Rds On (Max) @ Id, Vgs | 6 Ohm @ 370mA, 10V |
| Input Capacitance (Ciss) @ Vds | 70pF @ 25V |
| Power - Max | 1.79W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 2.4nC @ 10V |
| Package / Case | SOT-223, SC-73, TO-261 (3 Leads + Tab) |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | BSP123E6327T
BSP123E6327T
BSP123XTINTR ND
BSP123XTINTRND
BSP123XTINTR
|
BSP123E6327T Data Sheet
