Features: · Direct interface to C-MOS, TTL, etc.· High-speed switching· No secondary breakdownPinoutSpecifications Drain-source voltage VDS max. 200V Gate-source voltage (open drain) ±VGSO max. 20 V Drain current (DC) ID max. 350 mA Drain current (p...
BSP121: Features: · Direct interface to C-MOS, TTL, etc.· High-speed switching· No secondary breakdownPinoutSpecifications Drain-source voltage VDS max. 200V Gate-source voltage (open d...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Drain-source voltage |
VDS |
max. |
200V |
Gate-source voltage (open drain) |
±VGSO |
max. |
20 V |
Drain current (DC) |
ID |
max. |
350 mA |
Drain current (peak) |
IDM |
max. |
1.2 A |
Total power dissipation up to Tamb = 25 °C (note 1) |
Ptot |
1.5W | |
Storage temperature range |
Tstg |
-65 to + 150 °C | |
Junction temperature |
Tj |
max. |
150 °C |
N-channel enhancement mode vertical D-MOS transistor BSP121 in aminiature SOT223 envelope and designed for use as a line current interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers.