Features: · Direct interface to C-MOS, TTL, etc.· High-speed switching· No secondary breakdownPinoutSpecificationsDrain-source voltage .........................VDS max. 200 VGate-source voltage (open drain) .................±VGSO max. 20 VDrain current (DC).......................... ID max. 250 mA...
BSP120: Features: · Direct interface to C-MOS, TTL, etc.· High-speed switching· No secondary breakdownPinoutSpecificationsDrain-source voltage .........................VDS max. 200 VGate-source voltage (ope...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Drain-source voltage .........................VDS max. 200 V
Gate-source voltage (open drain) .................±VGSO max. 20 V
Drain current (DC).......................... ID max. 250 mA
Drain current (peak)........................ IDM max. 800 mA
Total power dissipation up to Tamb = 25 °C (note 1) ........Ptot max. 1.5 W
Storage temperature range ...................Tstg -65 to + 150 °C
Junction temperature .........................Tj max. 150 °C
Note:1. Device mounted on an epoxy printed-circuit board 40 mm X 40 mm X 1.5 mm; mounting pad for the drain lead min. 6 cm2.
N-channel enhancement mode vertical D-MOS transistor BSP120 in a miniature SOT223 envelope and designed for use as a line current interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers.